STP35NF10 STMicroelectronics, STP35NF10 Datasheet

MOSFET N-CH 100V 40A TO-220

STP35NF10

Manufacturer Part Number
STP35NF10
Description
MOSFET N-CH 100V 40A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet

Specifications of STP35NF10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 17.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
1550pF @ 25V
Power - Max
115W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
115000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.035Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2645-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP35NF10
Manufacturer:
STMicroelectronics
Quantity:
34 624
Part Number:
STP35NF10
Manufacturer:
ST
Quantity:
6 000
Part Number:
STP35NF10
Manufacturer:
ST
0
Part Number:
STP35NF10,P35NF10
Manufacturer:
ST
0
Order codes
General features
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
June 2006
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Switching application
STB35NF10
STP35NF10
Type
STB35NF10T4
Part number
STP35NF10
V
100V
100V
DSS
<0.035Ω
<0.035Ω
N-channel 100V - 0.030Ω - 40A - D
R
Low gate charge STripFET™ II Power MOSFET
DS(on)
B35NF10
P35NF10
Marking
40A
40A
I
D
Rev 4
Internal schematic diagram
TO-220
Package
TO-220
D
2
PAK
1
2
3
STB35NF10
STP35NF10
2
PAK/TO-220
Tape & reel
Packaging
Tube
D
2
PAK
1
www.st.com
3
1/14
14

Related parts for STP35NF10

STP35NF10 Summary of contents

Page 1

... Switching application Order codes Part number STB35NF10T4 STP35NF10 June 2006 Low gate charge STripFET™ II Power MOSFET I DS(on) D 40A 40A Internal schematic diagram Marking B35NF10 P35NF10 Rev 4 STB35NF10 STP35NF10 2 PAK/TO-220 TO-220 Package Packaging 2 D PAK Tape & reel TO-220 Tube ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ STB35NF10 - STP35NF10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STB35NF10 - STP35NF10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T tot Derating Factor (2) dv/dt Peak diode recovery voltage slope (3) E Single pulse avalanche energy ...

Page 4

... V = 10V Parameter Test conditions V = 15V 25V 1MHz 50V 4.7Ω (see Figure 12 80V 10V GS (see Figure 13) STB35NF10 - STP35NF10 Min. Typ. Max. =0 100 GS 10 ±100 = 250µ 17.5A 0.030 0.035 Min. Typ. Max. = 17.5A 20 1550 220 17. 10V 35A Unit V 1 µA µA ...

Page 5

... STB35NF10 - STP35NF10 Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/14 STB35NF10 - STP35NF10 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...

Page 7

... STB35NF10 - STP35NF10 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/14 ...

Page 8

... Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/14 STB35NF10 - STP35NF10 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform ...

Page 9

... STB35NF10 - STP35NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STB35NF10 - STP35NF10 inch MIN. TYP. MAX. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.036 0.044 0.067 0.017 0.023 0.048 0.053 0.352 0.368 0.315 ...

Page 11

... STB35NF10 - STP35NF10 DIM L20 L30 øP Q TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 0.49 0.70 15.25 15.75 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 Package mechanical data inch MIN ...

Page 12

... MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.933 0.956 STB35NF10 - STP35NF10 REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12 ...

Page 13

... STB35NF10 - STP35NF10 6 Revision history Table 6. Revision history Date 21-Jun-2004 26-Jun-2006 Revision 3 Complete version 4 New template, no content change Revision history Changes 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STB35NF10 - STP35NF10 ...

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