STP4NK80Z STMicroelectronics, STP4NK80Z Datasheet - Page 15

• Manufacturer Part Number: STP4NK80Z
• Description: MOSFET N-CH 800V 3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r
• Type: Power MOSFETr

Specifications of STP4NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.9 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 800V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3192-5

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
DIM.
C2
A1
A3
B2
B3
B5
B6
L1
L2
A
B
C
D
E
G
H
L
MIN.
0.64
0.45
0.48
15.9
2.2
0.9
0.7
5.2
6.4
4.4
0.8
6
9
L2
TO-251 (IPAK) MECHANICAL DATA
TYP.
mm
0.3
0.8
D
L1
MAX.
0.85
0.95
16.3
1.3
2.4
1.1
0.9
5.4
0.6
0.6
6.2
6.6
4.6
9.4
1.2
1
H
L
0.086
0.035
0.027
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
MIN.
Package mechanical data
0.012
0.031
TYP.
inch
0068771-E
MAX.
0.043
0.051
0.031
0.212
0.023
0.641
0.047
0.039
0.094
0.033
0.037
0.023
0.244
0.260
0.181
0.370
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