STP36NF06L STMicroelectronics, STP36NF06L Datasheet - Page 2

MOSFET N-CH 60V 30A TO-220

STP36NF06L

Manufacturer Part Number
STP36NF06L
Description
MOSFET N-CH 60V 30A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STP36NF06L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 5V
Input Capacitance (ciss) @ Vds
660pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
30 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
30A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
40mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7522-5
STP36NF06L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP36NF06L
Manufacturer:
STMicroelectronics
Quantity:
2 300
Part Number:
STP36NF06L
Manufacturer:
ST
Quantity:
20 000
STB36NF06L STP36NF06L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON
DYNAMIC
2/8
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
R
V
(BR)DSS
(*)
g
I
I
C
DS(on)
C
GS(th)
C
GSS
DSS
fs (*)
T
oss
rss
iss
l
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case, for 10 sec)
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
CASE
I
V
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
GS
DS
DS
= 250 µA, V
= 25 °C UNLESS OTHERWISE SPECIFIED)
= Max Rating
= Max Rating T
= V
= 25 V
= ± 18V
= 10 V
= 5 V
= 25V f = 1 MHz V
Test Conditions
Test Conditions
Test Conditions
GS
GS
I
I
= 0
D
D
I
I
D
D
= 15 A
= 15 A
= 15 A
C
= 250 µA
= 125°C
GS
Max
Max
= 0
Min.
Min.
Min.
60
1
2.14
62.5
0.032
300
Typ.
Typ.
Typ.
660
180
20
70
0.040
0.048
Max.
±100
Max.
Max.
10
1
°C/W
°C/W
°C
Unit
Unit
Unit
µA
µA
nA
pF
pF
pF
V
V
S

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