STD11NM60ND STMicroelectronics, STD11NM60ND Datasheet - Page 6

MOSFET N-CH 600V 10A DPAK

STD11NM60ND

Manufacturer Part Number
STD11NM60ND
Description
MOSFET N-CH 600V 10A DPAK
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet

Specifications of STD11NM60ND

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 50V
Power - Max
90W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.45 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
10 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
9 ns
Rise Time
7 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8477-2

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Part Number:
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Electrical characteristics
6/19
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
SDM
V
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
SD
I
Q
Q
t
SD
t
t
t
r
rr
rr
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 14625 Rev 2
V
R
(see
I
I
V
(see
V
di/dt =100 A/µs, I
Tj = 150 °C (see
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
=10 A, di/dt =100 A/µs,
= 10 A, V
= 300 V, I
= 100 V
= 100 V
Figure
Figure
Test conditions
Test conditions
18)
20)
GS
D
GS
=0
= 5 A,
SD
Figure
= 10 V
= 10 A
20)
STD/F/I/P/U11NM60ND
Min
Min
-
-
-
-
-
0.69
Typ
130
200
Typ
1.2
11
12
16
50
7
9
Max
Max Unit
1.3
10
40
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A

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