STB40NS15T4 STMicroelectronics, STB40NS15T4 Datasheet

MOSFET N-CH 150V 40A D2PAK

STB40NS15T4

Manufacturer Part Number
STB40NS15T4
Description
MOSFET N-CH 150V 40A D2PAK
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet

Specifications of STB40NS15T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2420pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
20A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.045 Ohms
Forward Transconductance Gfs (max / Min)
29.4 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
40 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7948-2
STB40NS15T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB40NS15T4
Manufacturer:
ST
0
Part Number:
STB40NS15T4-TR
Manufacturer:
ST
0
Features
Applications
Description
This Power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
Table 1.
October 2007
STB40NS15
Exceptional dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Switching application
Type
STB40NS15T4
Part number
Device summary
V
150V
DSS
<0.052Ω
R
(max)
DS(on)
B40NF15
Marking
N-channel 150V - 0.045Ω - 40A - D
40A
I
D
MESH OVERLAY™ Power MOSFET
Rev 4
Figure 1.
Package
D
2
PAK
Internal schematic diagram
D
2
PAK
STB40NS15
1
3
Tape & reel
Packaging
www.st.com
2
PAK
1/13
13

Related parts for STB40NS15T4

STB40NS15T4 Summary of contents

Page 1

... MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Table 1. Device summary Part number STB40NS15T4 October 2007 N-channel 150V - 0.045Ω - 40A - D MESH OVERLAY™ Power MOSFET R DS(on) I ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB40NS15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STB40NS15 Table 7. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characterisics Figure 6. Transconductance 6/13 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STB40NS15 ...

Page 7

STB40NS15 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature 7/13 ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. ...

Page 9

STB40NS15 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...

Page 10

Package mechanical data DIM 10/ PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 ...

Page 11

STB40NS15 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 ...

Page 12

Revision history 6 Revision history Table 8. Document revision history Date 21-Jun-2004 26-Jun-2006 24-Oct-2007 12/13 Revision 2 Preliminary version 3 New template, no content change 4 Minor text changes STB40NS15 Changes ...

Page 13

... STB40NS15 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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