STB6NK90ZT4 STMicroelectronics, STB6NK90ZT4 Datasheet - Page 6

• Manufacturer Part Number: STB6NK90ZT4
• Description: MOSFET N-CH 900V 5.8A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB6NK90ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 60.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.9A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 1.56ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6555-2; STB6NK90ZT4

Electrical characteristics
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Table 7.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z
I
I
A/µs
V
(see
SD
SD
DD
= 5.8 A, V
= 5.8 A, di/dt = 100
Test conditions
= 36 V, Tj = 150°C
Figure
22)
GS
= 0
Min.
5880
Typ.
840
14
Max.
23.2
5.8
1.6
ns
µC
A
Unit
A
A
V