IRF6662TR1PBF International Rectifier, IRF6662TR1PBF Datasheet

IRF6662TR1PBF

Manufacturer Part Number

IRF6662TR1PBF

Description

MOSFET N-CH 100V 8.3A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6662TRPBF.pdf (10 pages)

Specifications of IRF6662TR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

22 mOhm @ 8.2A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

8.3A

Vgs(th) (max) @ Id

4.9V @ 100µA

Gate Charge (qg) @ Vgs

31nC @ 10V

Input Capacitance (ciss) @ Vds

1360pF @ 25V

Power - Max

2.8W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MZ

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

8.3 A

Power Dissipation

89 W

Gate Charge Qg

22 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6662TR1PBFTR

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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible

with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual

sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom

applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device

coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability

improvements, and makes this device ideal for high performance isolated DC-DC converters.

Notes:

www.irf.com

Absolute Maximum Ratings

Application Specific MOSFETs

RoHs Compliant

Lead-Free (Qualified up to 260°C Reflow)

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

100

Fig 1. Typical On-Resistance vs. Gate Voltage

= 25°C

= 70°C

= 25°C

V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

T J = 125°C

T J = 25°C

Parameter

I D = 4.9A

@ 10V

100V max ±20V max

22nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

12.0

10.0

measured with thermocouple mounted to top (Drain) of part.

8.0

6.0

4.0

2.0

0.0

6.8nC

= 25°C, L = 3.2mH, R

I D = 4.9A

Fig 2. Typical Total Gate Charge vs.

Typical values (unless otherwise specified)

IRF6662TRPbF

DirectFET™ Power MOSFET

Q G Total Gate Charge (nC)

Gate-to-Source Voltage

1.2nC

V DS = 80V

V DS = 50V

V DS = 20V

gs2

IRF6662PbF

Max.

100

±20

8.3

6.6

4.9

50nC

= 25Ω, I

17.5mΩ@ 10V

DirectFET™ ISOMETRIC

DS(on)

packaging to achieve

= 4.9A.

11nC

oss

Units

3.9V

08/25/06

gs(th)

Related parts for IRF6662TR1PBF

IRF6662TR1PBF Summary of contents

Page 1

RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing ...

Page 2

IRF6662PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J T Storage Temperature ...

Page 4

IRF6662PbF 100 10 6.0V ≤ 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 10V ≤60µs PULSE WIDTH 150° ...

Page 5

100 150° 25° -40° 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) Fig 10. ...

Page 6

IRF6662PbF Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors Fig 15a. Gate Charge Test Circuit D.U 20V V GS 0.01 Ω ...

Page 7

D.U.T + Circuit Layout Considerations • Low Stray Inductance • Ground Plane - • Low Leakage Inductance Current Transformer + - R • di/dt controlled • Driver same type as D.U.T. • I controlled by Duty Factor ...

Page 8

IRF6662PbF DirectFET™ Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC ...

Page 9

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6662TRPBF). For 1000 parts on 7" reel, order IRF6662TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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