IRF6662TR1PBF International Rectifier, IRF6662TR1PBF Datasheet - Page 6

• Manufacturer Part Number: IRF6662TR1PBF
• Description: MOSFET N-CH 100V 8.3A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6662TR1PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.3A
• Vgs(th) (max) @ Id: 4.9V @ 100µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1360pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MZ
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8.3 A
• Power Dissipation: 89 W
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF6662TR1PBFTR

Fig 16a. Unclamped Inductive Test Circuit
IRF6662PbF
Fig 15a. Gate Charge Test Circuit
6
12V
V
GS
R G
20V
Same Type as D.U.T.
V
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V DS
GS
Fig 17a. Switching Time Test Circuit
G
Current Regulator
.2µF
10V
V
t p
GS
50KΩ
3mA
V
I AS
Current Sampling Resistors
DS
D.U.T
.3µF
0.01 Ω
L
I
G
D.U.T.
D.U.T.
I
D
R
15V
D
DRIVER
+
-
V
DS
+
-
V DD
+
-
V
A
DD
90%
V
10%
V
DS
Fig 15b. Gate Charge Waveform
GS
Fig 16b. Unclamped Inductive Waveforms
I
AS
Vgs(th)
Fig 17b. Switching Time Waveforms
Qgs1 Qgs2
Vds
t
d(on)
t
r
Qgd
t p
Qgodr
t
d(off)
V
(BR)DSS
t
f
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Vgs
Id