STP30NF10 STMicroelectronics, STP30NF10 Datasheet

MOSFET N-CH 100V 35A TO-220

STP30NF10

Manufacturer Part Number
STP30NF10
Description
MOSFET N-CH 100V 35A TO-220
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheets

Specifications of STP30NF10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 25V
Power - Max
115W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
45mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.038 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
115 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7520-5
STP30NF10

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DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
May 2002
.
STB30NF10
STP30NF10
STP30NF10FP
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING D
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
HIGH-EFFICIENCY DC-DC CONVERTERS
UPS AND MOTOR CONTROL
Pulse width limited by safe operating area.
Symbol
dv/dt
N-CHANNEL 100V - 0.038
E
I
V
DM
V
V
V
P
AS (2)
T
DGR
I
I
T
ISO
GS
stg
DS
TYPE
D
D
tot
(
j
(1)
LOW GATE CHARGE STripFET™ II POWER MOSFET
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
DS
(on) = 0.038
100 V
100 V
100 V
V
DSS
Parameter
2
<0.045
<0.045
<0.045
PAK (TO-263)
R
DS(on)
C
GS
= 25°C
GS
= 20 k )
= 0)
C
C
35 A
35 A
18 A
= 25°C
= 100°C
I
D
STP30NF10 STP30NF10FP
- 35A TO-220/TO-220FP/D
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
STB30NF10
STP30NF10
SD
TO-220FP
0.77
------
140
115
35
25
30A, di/dt 400A/µs, V
j
= 25
-55 to 175
1
o
Value
C, I
2
± 20
100
100
275
28
3
D
= 15A, V
STP30NF10FP
TO-220
DD
STB30NF10
2000
DD
0.2
18
13
72
30
V
= 30V
(BR)DSS
1
2
3
, T
j
(Suffix “T4”)
TO-263
D
T
JMAX
2
PAK
2
W/°C
V/ns
1
Unit
PAK
mJ
°C
W
V
V
V
A
A
A
V
3
1/11

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STP30NF10 Summary of contents

Page 1

... Peak Diode Recovery voltage slope AS (2) E Single Pulse Avalanche Energy V Insulation Withstand Voltage (DC) ISO T Storage Temperature stg T Operating Junction Temperature j ( Pulse width limited by safe operating area. May 2002 . STP30NF10 STP30NF10FP - 35A TO-220/TO-220FP DS(on TO-220FP INTERNAL SCHEMATIC DIAGRAM STB30NF10 STP30NF10 = 25° 100° ...

Page 2

... STB30NF10 STP30NF10 STP30NF10FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter ...

Page 3

... Source-drain Current (pulsed) SD (*) V Forward On Voltage t Reverse Recovery Time rr Q Reverse Recovery Charge rr Reverse Recovery Current I RRM (*) Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. Safe Operating Area for TO-220 STB30NF10 STP30NF10 STP30NF10FP Test Conditions 4 (Resistive Load, Figure ...

Page 4

... STB30NF10 STP30NF10 STP30NF10FP Thermal Impedance Output Characteristics Transconductance 4/11 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics STB30NF10 STP30NF10 STP30NF10FP Capacitance Variations Normalized on Resistance vs Temperature Normalized Breakdown Voltage Temperature 5/11 ...

Page 6

... STB30NF10 STP30NF10 STP30NF10FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... B2 1.14 C 0.45 C2 1. 8 1.27 L3 1 0° STB30NF10 STP30NF10 STP30NF10FP 2 D PAK MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 5.28 0.192 15.85 ...

Page 8

... STB30NF10 STP30NF10 STP30NF10FP DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/11 TO-220 MECHANICAL DATA mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 16.4 14.0 2 ...

Page 9

... D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ STB30NF10 STP30NF10 STP30NF10FP mm MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 0.094 10.4 0.393 16 30.6 1.126 10.6 0.385 16 ...

Page 10

... STB30NF10 STP30NF10 STP30NF10FP 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3 ...

Page 11

... STMicroelectronics. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. STB30NF10 STP30NF10 STP30NF10FP The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners ...

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