STP24NF10 STMicroelectronics, STP24NF10 Datasheet - Page 4

• Manufacturer Part Number: STP24NF10
• Description: MOSFET N-CH 100V 26A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r
• Type: Power MOSFETr

Specifications of STP24NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 85W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 26 A
• Power Dissipation: 85000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.07Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3185-5

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
GS
Parameter
= 0)
V
V
V
V
(see Figure 7)
I
V
V
V
V
V
D
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 250µA, V
V
R
(see Figure 12)
= 80V, I
= V
= 10V, I
= 15V, I
=25V, f=1 MHz, V
=10V
= Max rating,
= Max rating @125°C
= ±20V
DD
G
Test conditions
Test conditions
=4.7Ω, V
Test conditions
=50V, I
GS
, I
D
D
D
D
= 12A
= 24A
GS
= 250µA
= 12A
D
= 12A,
GS
= 0
=10V
GS
=0
Min.
100
Min.
STB24NF10 - STP24NF10
2
Min.
0.055
Typ.
Typ.
870
125
10
50
30
10
3
6
Typ.
60
15
50
20
0.060
Max.
Max.
±
100
41
10
Max.
1
4
Unit
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S