STP11NK50Z STMicroelectronics, STP11NK50Z Datasheet - Page 3

• Manufacturer Part Number: STP11NK50Z
• Description: MOSFET N-CH 500V 10A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP11NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 520 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 68nC @ 10V
• Input Capacitance (ciss) @ Vds: 1390pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 520mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.52 Ohms
• Forward Transconductance Gfs (max / Min): 77 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB11NK50Z - STP11NK50ZFP - STP11NK50Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
V
Symbol
R
Symbol
Symbol
dv/dt
ESD(G-S)
R
I
SD
thj-case
P
V
DM
V
V
T
E
thj-a
T
T
I
I
I
TOT
ISO
GS
DS
stg
AS
D
D
AS
l
J
(2)
≤ 10 A, di/dt ≤ 200 A/µs, V
(3)
Absolute maximum ratings
Thermal data
Avalanche characteristics
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C= 100 pF,
R= 1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
Parameter
Parameter
Parameter
DD
C
≤ V
D
= 25 °C
=I
GS
(BR)DSS
AR
= 0)
, V
DD
C
C
, T
=100 °C
= 25 °C
= 50 V)
j
≤ T
JMAX
.
TO-220
TO-220
D²PAK
D²PAK
125
6.3
10
40
--
1
1
-55 to 150
Value
Value
Value
4000
± 30
62.5
500
300
190
4.5
10
TO-220FP
TO-220FP
Electrical ratings
6.3
2500
10
40
0.24
4.2
30
(1)
(1)
(1)
°C/W
°C/W
W/°C
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
V
V
A
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