IRFR3710ZPBF International Rectifier, IRFR3710ZPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR3710ZPBF
• Description: MOSFET N-CH 100V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFR3710ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 2930pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.018Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 56A
• Power Dissipation: 140W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Current, Drain: 56 A
• Gate Charge, Total: 69 nC
• Polarization: N-Channel
• Resistance, Drain To Source On: 15 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 53 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 39 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR3710ZPBF

Electrical Characteristics @ T
V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
Source-Drain Ratings and Characteristics
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
V
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
rr
2
(BR)DSS
eff.
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Parameter
™
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
39
0.088
2930
1200
–––
–––
–––
–––
–––
–––
–––
290
180
180
430
–––
–––
–––
4.5
7.5
15
69
15
25
14
43
53
42
35
41
-200
–––
–––
–––
250
200
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
220
4.0
1.3
18
20
56
53
62
V/°C
m
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 33A
= 33A
= 25°C, I
= 25°C, I
= 6.8
= V
= 25V, I
= 100V, V
= 100V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
e
e
Conditions
D
Conditions
D
DS
S
F
D
D
DS
DS
= 250µA
= 250µA
= 33A, V
= 33A, V
= 33A
= 33A
GS
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
e
= 0V
= 0V, T
www.irf.com
D
e
= 1mA
GS
DD
G
J
= 50V
= 125°C
G
= 0V
f
e
S
D
D
S