IRFR3710ZPBF International Rectifier, IRFR3710ZPBF Datasheet

MOSFET N-CH 100V 42A DPAK

IRFR3710ZPBF

Manufacturer Part Number
IRFR3710ZPBF
Description
MOSFET N-CH 100V 42A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets
1.IRFR3710ZTRLPBF.pdf (12 pages)
2.IRFR3710ZPBF.pdf (4 pages)

Specifications of IRFR3710ZPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
2930pF @ 25V
Power - Max
140W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.018Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
56A
Power Dissipation
140W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Current, Drain
56 A
Gate Charge, Total
69 nC
Polarization
N-Channel
Resistance, Drain To Source On
15 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
53 ns
Time, Turn-on Delay
14 ns
Transconductance, Forward
39 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFR3710ZPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRFR3710ZPBF
Manufacturer:
IR
Quantity:
1 000
HEXFET
Features
Description
This HEXFET
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
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www.irf.com
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
JA
JA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Multiple Package Options
Lead-Free
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
is a registered trademark of International Rectifier.
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Power MOSFET utilizes the
Ã
Parameter
Parameter
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
i
(Silicon Limited)
(Package Limited)
h
G
Refer to page 11 for package outline
IRFR3710ZPbF
D-Pak
IRFU3710Z-701PbF
IRFU3710Z-701PbF
I-Pak Leadform 701
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
D
S
-55 to + 175
HEXFET
IRFR3710ZPbF
IRFU3710ZPbF
Max.
0.95
± 20
220
140
150
200
56
39
42
IRFU3710ZPbF
R
V
DS(on)
I-Pak
®
DSS
Max.
I
Power MOSFET
1.05
110
D
50
= 42A
PD - 95513D
= 100V
= 18m
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFR3710ZPBF Summary of contents

Page 1

... International Rectifier. www.irf.com G IRFR3710ZPbF Refer to page 11 for package outline Parameter @ 10V (Silicon Limited 10V GS @ 10V (Package Limited Parameter 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF ® HEXFET Power MOSFET 100V DSS R = 18m DS(on 42A D S D-Pak I-Pak IRFU3710ZPbF I-Pak Leadform 701 IRFU3710Z-701PbF Max ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

VGS TOP 15V 10V 6.0V 5.0V 4.8V 4.5V 4.3V BOTTOM 4.0V 100 10 4.0V 60µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 175°C ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Limited By Package 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 200 TOP Single Pulse BOTTOM 1% Duty Cycle 33A 150 100 ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

E XAMP IRF R 120 WIT CODE 1234 16, 2001 ...

Page 10

EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 2001 IN THE AS SEMBLY LINE "A" Note: "P" sembly line position indicates Lead-Free" OR Notes: 1. For an Automotive Qualified ...

Page 11

www.irf.com ‰ 11 ...

Page 12

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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