STU6N62K3 STMicroelectronics, STU6N62K3 Datasheet - Page 11
![MOSFET N-CH 620V 5.5A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
STU6N62K3
Manufacturer Part Number
STU6N62K3
Description
MOSFET N-CH 620V 5.5A IPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STD6N62K3.pdf
(17 pages)
Specifications of STU6N62K3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.28 Ohm @ 2.8A, 10V
Drain To Source Voltage (vdss)
620V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
25.7nC @ 10V
Input Capacitance (ciss) @ Vds
706pF @ 50V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.28 Ohms
Drain-source Breakdown Voltage
620 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.5 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STU6N62K3
Manufacturer:
STMicroelectronics
Quantity:
2 400
STD6N62K3 - STF6N62K3 - STP6N62K3 - STU6N62K3
Dim
L20
L30
∅P
D1
H1
b1
e1
J1
L1
Q
A
D
E
F
b
c
e
L
15.25
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
Min
10
13
TO-220 mechanical data
16.40
28.90
1.27
mm
Typ
15.75
10.40
Max
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.044
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
Min
0.6
Package mechanical data
0.050
0.645
1.137
inch
Typ
0.181
0.034
0.066
0.027
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.151
0.116
Max
0.62
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