STF3NK80Z STMicroelectronics, STF3NK80Z Datasheet - Page 8
![MOSFET N-CH 800V 2.5A TO220FP](/photos/5/30/53057/to-220_fp_sml.jpg)
STF3NK80Z
Manufacturer Part Number
STF3NK80Z
Description
MOSFET N-CH 800V 2.5A TO220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STF3NK80Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 Ohm @ 1.25A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 Ohms
Forward Transconductance Gfs (max / Min)
2.1 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
4.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4342-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STF3NK80Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STF3NK80Z
Manufacturer:
SGS
Quantity:
2 892
Part Number:
STF3NK80Z
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
8/18
Figure 7.
Figure 9.
Figure 11. Normalized gate threshold voltage
Transconductance
Gate charge vs gate-source voltage Figure 10. Capacitance variations
vs temperature
STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1
Figure 8.
Figure 12. Normalized on resistance vs
Static drain-source on resistance
temperature