STB80NF55-08T4 STMicroelectronics, STB80NF55-08T4 Datasheet - Page 2

• Manufacturer Part Number: STB80NF55-08T4
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80NF55-08T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 155nC @ 10V
• Input Capacitance (ciss) @ Vds: 3850pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 3V
• Transistor Case Style: D2-PAK
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3737-2

STB80NF55-08/-1 STP80NF55-08
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON
DYNAMIC
2/11
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
R
V
(BR)DSS
(*)
g
I
I
C
DS(on)
C
GS(th)
C
GSS
DSS
fs (*)
T
oss
rss
iss
l
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
case
I
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
DS =
DS
= 25 °C unless otherwise specified)
= 250 µA
= Max Rating
= Max Rating T
= V
= 25V, f = 1 MHz, V
= ± 20V
= 10 V
15 V
Test Conditions
Test Conditions
Test Conditions
GS
V
GS
I
I
D
D
I
= 40 A
D
C
= 0
= 250 µA
= 18 A
= 125°C
GS
Max
Max
Typ
= 0
Min.
Min.
Min.
55
2
0.0065
62.5
300
3850
0.5
Typ.
Typ.
Typ.
800
250
40
3
0.008
Max.
±100
Max.
Max.
10
1
4
°C/W
°C/W
°C
Unit
Unit
Unit
µA
µA
nA
pF
pF
pF
V
V
S