IRF540ZSPBF International Rectifier, IRF540ZSPBF Datasheet - Page 6

• Manufacturer Part Number: IRF540ZSPBF
• Description: MOSFET N-CH 100V 36A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Power - Max: 92W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 26.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 36 A
• Power Dissipation: 92 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 39 ns
• Gate Charge Qg: 42 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 51 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540ZSPBF

0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01
L
Q
Charge
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
VCC
V DD
A
Fig 14. Threshold Voltage Vs. Temperature
4.0
3.5
3.0
2.5
2.0
1.5
180
160
140
120
100
80
60
40
20
Fig 12c. Maximum Avalanche Energy
0
-75 -50 -25
25
Starting T J , Junction Temperature (°C)
50
Vs. Drain Current
T J , Temperature ( °C )
0
75
25
50
100
75
I D = 250µA
TOP
BOTTOM 20A
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125
100 125 150 175
150
I D
8.3A
14A
175