IRF540ZSPBF International Rectifier, IRF540ZSPBF Datasheet - Page 5

• Manufacturer Part Number: IRF540ZSPBF
• Description: MOSFET N-CH 100V 36A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF540ZSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1770pF @ 25V
• Power - Max: 92W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 26.5 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 36 A
• Power Dissipation: 92 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 39 ns
• Gate Charge Qg: 42 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 51 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF540ZSPBF

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0.001
0.01
0.1
10
40
30
20
10
Fig 9. Maximum Drain Current Vs.
0
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.02
0.20
0.10
0.05
0.01
Case Temperature
50
T J , Junction Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
3.0
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
-60 -40 -20 0
0.001
I D = 22A
V GS = 10V
T J , Junction Temperature (°C)
Vs. Temperature
20 40 60 80 100 120 140 160 180
0.01
5
0.1