STD12N65M5 STMicroelectronics, STD12N65M5 Datasheet - Page 4

• Manufacturer Part Number: STD12N65M5
• Description: MOSFET N-CH 650V 8.5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD12N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.3A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 900pF @ 100V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohm
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 5.4 A, 8.5 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 22 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10568-2

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
Table 5.
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
V
when V
C
o(er)
I
I
C
DS(on)
C
o(tr)
Q
GS(th)
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
DS
oss
iss
rss
gs
gd
G
g
(1)
increases from 0 to 80% V
(2)
DS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
DSS
= 0)
Doc ID 15428 Rev 4
DSS
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 100 V, f = 1 MHz,
= 0
= 0 to 520 V, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 520 V, I
Figure
Test conditions
Test conditions
GS
, I
20)
GS
D
D
D
= 250 µA
= 4.3 A
= 0
= 4.3 A,
GS
C
=125 °C
= 0
Min.
Min.
650
3
-
-
-
-
-
STD/F/I/P/U12N65M5
Typ.
Typ.
0.39
900
2.5
22
64
21
22
4
2
9
7
Max.
Max.
0.43
100
100
oss
1
5
-
-
-
-
-
oss
when
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
pF
Ω
Ω
V
V