STB60N55F3 STMicroelectronics, STB60N55F3 Datasheet - Page 12
STB60N55F3
Manufacturer Part Number
STB60N55F3
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP60N55F3.pdf
(20 pages)
Specifications of STB60N55F3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 m Ohms
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
56 A to 80 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
80A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
8.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5954-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB60N55F3
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB60N55F3
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
12/20
Dim
A1
D1
E1
V2
b2
c2
e1
J1
L1
L2
A
D
E
H
R
b
e
L
c
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
Doc ID 13242 Rev 4
2.54
mm
Typ
0.4
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
0.016
inch
Typ
0.1
STx60N55F3
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.208
0.624
0.106
0.110
0.055
0.069
Max
8°