STD65N55F3 STMicroelectronics, STD65N55F3 Datasheet - Page 4

• Manufacturer Part Number: STD65N55F3
• Description: MOSFET N-CH 55V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD65N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 32A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 6.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 8.5 m Ohms
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 56 A to 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33.5 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7973-2; STD65N55F3

Electrical characteristics
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4/13
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
C
C
GS(th)
DS(on)
Q
Q
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
Voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Static
Dynamic
DS
= 0)
Parameter
GS
Parameter
= 0)
I
V
V
V
V
V
D
V
V
V
V
(see Figure 15)
GS
GS
DS
DS
DS
GS
DS
DS
DD
= 250µA, V
= V
= 10V, I
= Max rating,
= Max rating,Tc = 125°C
= ±20V
=27V, I
=25V, I
=25V, f=1MHz, V
=10V
Test conditions
Test conditions
GS
, I
D
D
D
= 32A
= 250µA
D
GS
= 65A
=32A
= 0
GS
=0
Min. Typ. Max. Unit
Min
55
2
2200
Typ. Max. Unit
33.5
12.5
500
6.5
9.5
50
25
STD65N55F3
±
100
8.5
200
10
45
4
mΩ
nC
nC
nC
µA
µA
nA
pF
pF
pF
V
V
S