STD11NM50N STMicroelectronics, STD11NM50N Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
STD11NM50N
Manufacturer Part Number
STD11NM50N
Description
MOSFET N-CH 500V 9A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Specifications of STD11NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
470 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
547pF @ 50V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.47 Ohm
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
6 A, 9 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10567-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD11NM50N
Manufacturer:
STMicroelectronics
Quantity:
2 050
Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
when V
C
C
o(er)
I
I
C
DS(on)
C
o(tr)
Q
GS(th)
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
oss eq.
oss eq.
oss
oss
iss
rss
gs
gd
G
g
(1)
(2)
when V
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
increases from 0 to 80% V
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
DS
increases from 0 to 80% V
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 17156 Rev 2
DSS
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
DSS
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 400 V, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 400 V, I
Figure
Test conditions
Test conditions
GS
, I
18)
STD11NM50N, STF11NM50N, STP11NM50N
GS
D
D
D
= 250 µA
= 4.5 A
= 0
= 9 A,
GS
C
=125 °C
= 0
Min.
Min.
500
2
-
-
-
-
-
Typ.
Typ.
547
5.8
3.7
0.4
42
59
29
19
10
3
2
Max.
Max.
0.47
100
10
1
4
-
-
-
-
-
oss
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
pF
V
V
Ω
Ω