IRLB8748PBF International Rectifier, IRLB8748PBF Datasheet - Page 6

• Manufacturer Part Number: IRLB8748PBF
• Description: MOSFET N-CH 30V 78A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLB8748PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 78A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2139pF @ 15V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 75 W
• Mounting Style: Through Hole
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLB8748PbF
6
Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
Fig 12. On-Resistance vs. Gate Voltage
I
18
16
14
12
10
AS
8
6
4
2
R G
20V
V
V DS
GS
V GS, Gate -to -Source Voltage (V)
t p
4
I AS
D.U.T
t p
0.01 Ω
L
6
T J = 125°C
T J = 25°C
15V
V
(BR)DSS
DRIVER
8
I D = 40A
+
-
V DD
A
10
500
450
400
350
300
250
200
150
100
50
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
0
V
90%
10%
V
25
DS
GS
Fig 13c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
vs. Drain Current
r
75
≤ 0.1 %
≤ 1
100
TOP
BOTTOM 32A
t
125
d(off)
www.irf.com
t
f
11.6A
6.73A
I D
150
+
-
175