IRLB8748PBF International Rectifier, IRLB8748PBF Datasheet - Page 4

• Manufacturer Part Number: IRLB8748PBF
• Description: MOSFET N-CH 30V 78A TO220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLB8748PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 78A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 23nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2139pF @ 15V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 92 A
• Power Dissipation: 75 W
• Mounting Style: Through Hole
• Gate Charge Qg: 15 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLB8748PbF
4
10000
1000
1000
100
100
0.1
10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.0
1
T J = 175°C
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.5
T J = 25°C
C oss
1.0
C iss
C rss
f = 1 MHZ
10
1.5
V GS = 0V
2.0
100
2.5
1000
14.0
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
10
Fig 8. Maximum Safe Operating Area
1
0
0
Fig 6. Typical Gate Charge vs.
I D = 32A
Tc = 25°C
Tj = 175°C
Single Pulse
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Gate-to-Source Voltage
10
V DS = 24V
V DS = 15V
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10msec
1msec
20
100µsec
10
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30
100
40