IRL3303SPBF International Rectifier, IRL3303SPBF Datasheet - Page 3

• Manufacturer Part Number: IRL3303SPBF
• Description: MOSFET N-CH 30V 38A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3303SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 870pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 38 A
• Gate Charge, Total: 26 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 68 W
• Resistance, Drain To Source On: 0.026 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 14 ns
• Time, Turn-on Delay: 7.4 ns
• Transconductance, Forward: 12 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±16 V
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 38 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL3303SPBF

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1000
1000
100
100
0.1
0.1
10
10
1
1
0.1
2
TOP
BOTTOM 2.5V
3
V
V
GS
T = 25°C
DS
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
J
4
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
5
T = 175°C
2.5V
J
6
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
DS
J
7
= 15V
10
8
9
100
10
A
A
1000
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
TOP
BOTTOM 2.5V
I
D
= 34A
V
T , Junction Temperature (°C)
DS
J
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
, Drain-to-Source Voltage (V)
0
1
20
40
2.5V
60
80 100 120 140 160 180
20µs PULSE WIDTH
T = 175°C
J
10
V
GS
= 10V
3
100
A
A