IRFZ46NLPBF International Rectifier, IRFZ46NLPBF Datasheet - Page 7

• Manufacturer Part Number: IRFZ46NLPBF
• Description: MOSFET N-CH 55V 53A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ46NLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1696pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Power Dissipation: 120 W
• Mounting Style: Through Hole
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ46NLPBF

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
R
G
D.U.T
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
= 5V for Logic Level Devices
SD
DS
Fig 14. For N-Channel HEXFETS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
• dv/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - Device Under Test
SD
Diode Recovery
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
• Ground Plane
• Low Stray Inductance
• Low Leakage Inductance
di/dt
Current Transformer
D =
-
G
Period
„
P.W.
+
IRFZ46NS/LPbF
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
7