IRFZ46NLPBF International Rectifier, IRFZ46NLPBF Datasheet - Page 5

• Manufacturer Part Number: IRFZ46NLPBF
• Description: MOSFET N-CH 55V 53A TO-262
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ46NLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 1696pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-262-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 53 A
• Power Dissipation: 120 W
• Mounting Style: Through Hole
• Gate Charge Qg: 48 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ46NLPBF

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0.01
0.1
10
0.00001
1
D = 0.50
Fig 9. Maximum Drain Current Vs.
0.20
0.10
0.05
0.02
0.01
Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

(THERMAL RESPONSE)
0.0001
SINGLE PULSE
t , Rectangular Pulse Duration (sec)
1
0.001
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
0.01
V
90%
10%
V
DS
GS

IRFZ46NS/LPbF
1. Duty factor D =
2. Peak T = P
Notes:
R
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
d(on)
G
10V
V
GS
J
t
r
V
DS
DM
x Z
t / t
1
0.1

thJC
P
2
DM
D.U.T.
+ T
t
C
d(off)
t
R
1
D
t
2
t
f
V
5
+
-
DD
1