STD7NM50N STMicroelectronics, STD7NM50N Datasheet - Page 9

• Manufacturer Part Number: STD7NM50N
• Description: MOSFET N-CH 500V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD7NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 780 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 50V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.78 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 5 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7975-2; STD7NM50N

STD7NM50N - STD7NM50N-1 - STF7NM50N - STP7NM50N
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Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 16. Gate charge test circuit
Figure 18. Unclamped Inductive load test
Figure 20. Switching time waveform
circuit
Test circuit
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