IRF7425PBF International Rectifier, IRF7425PBF Datasheet - Page 5
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IRF7425PBF
Manufacturer Part Number
IRF7425PBF
Description
MOSFET P-CH 20V 15A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF7425PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 4.5V
Input Capacitance (ciss) @ Vds
7980pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
–15 A
Gate Charge, Total
87 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
0.082 Ohm
Resistance, Thermal, Junction To Case
50 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
230 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
44 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Drain To Source
–20 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±12 V
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8.2 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 15 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
160 ns
Gate Charge Qg
87 nC
Minimum Operating Temperature
- 55 C
Rise Time
20 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
15
12
0.01
9
6
3
0
100
0.1
10
0.00001
Fig 9. Maximum Drain Current Vs.
25
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
d(on)
1
J
≤ 0.1 %
t
≤ 1
r
IRF7425PbF
DM
x Z
1
thJA
P
2
DM
+ T
10
t
A
d(off)
t
1
t
2
t
f
-
+
100
5