IRF7425PBF International Rectifier, IRF7425PBF Datasheet

MOSFET P-CH 20V 15A 8-SOIC

IRF7425PBF

Manufacturer Part Number
IRF7425PBF
Description
MOSFET P-CH 20V 15A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF7425PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
1.2V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 4.5V
Input Capacitance (ciss) @ Vds
7980pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Channel Type
P
Current, Drain
–15 A
Gate Charge, Total
87 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
2.5 W
Resistance, Drain To Source On
0.082 Ohm
Resistance, Thermal, Junction To Case
50 °C/W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
230 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
44 S
Voltage, Breakdown, Drain To Source
-20 V
Voltage, Drain To Source
–20 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±12 V
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8.2 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 15 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
160 ns
Gate Charge Qg
87 nC
Minimum Operating Temperature
- 55 C
Rise Time
20 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
l
l
l
l
Thermal Resistance
These P-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
®
Power MOSFETs from
Parameter
Parameter
ƒ
ƒ
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
V
20V
DSS
1
2
3
4
Top View
R
HEXFET Power MOSFET
8
6
5
IRF7425PbF
7
DS(on)
-55 to + 150
8.2@V
13@V
Max.
Max.
± 12
50
D
D
D
D
-20
-15
-12
-60
2.5
1.6
A
20
GS
GS
max (mW)
= -2.5V
= -4.5V
SO-8
-15A
-13A
mW/°C
Units
Units
I
°C/W
D
°C
V
A
V
1
02/09/06

Related parts for IRF7425PBF

IRF7425PBF Summary of contents

Page 1

... Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com V DSS 20V Top View @ -4. -4.5V GS ƒ ƒ ƒ IRF7425PbF HEXFET Power MOSFET R max (mW) I DS(on) D 8.2@V = -4.5V -15A GS 13@V = -2.5V -13A SO-8 Max. Units -20 V -15 -12 A -60 2 ...

Page 2

... IRF7425PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... BOTTOM 10 1 ° 0.1 0.1 100 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -15V 0.0 2.0 2.2 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7425PbF VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V -1.0V -1.0V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS -15A ...

Page 4

... IRF7425PbF 12000 1MHz iss rss gd 10000 oss iss 8000 6000 4000 C oss 2000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.2 0.4 0.6 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 0 Fig 6 ...

Page 5

... RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7425PbF - + ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...

Page 6

... IRF7425PbF 0.015 0.010 0.005 1.0 2.0 3.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.010 0.009 0.008 0.007 -15A 0.006 0.005 0 4.0 5.0 Fig 13. Typical On-Resistance Vs. 12V V GS Fig 14b. Gate Charge Test Circuit ...

Page 7

... Temperature ( °C ) Fig 15. Typical Vgs(th) Variance Vs. Juction Temperature www.irf.com 120 100 -250µ 100 125 150 0.001 0.010 Fig 16. Typical Power Vs. Time IRF7425PbF 0.100 1.000 10.000 100.000 Time (sec) 7 ...

Page 8

... IRF7425PbF SO-8 Package Outline Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $à ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information. 02/06 IRF7425PbF 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12 ...

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