IRF3315SPBF International Rectifier, IRF3315SPBF Datasheet - Page 2

• Manufacturer Part Number: IRF3315SPBF
• Description: MOSFET N-CH 150V 21A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3315SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Current, Drain: 21 A
• Gate Charge, Total: 95 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 94 W
• Resistance, Drain To Source On: 0.082 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 49 ns
• Time, Turn-on Delay: 9.6 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 150 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 21A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 82mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 63.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3315SPBF

IRF3315S/L
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
I
I
L
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
DSS
GSS
S
on
d(on)
d(off)
f
SM
r
rr
S
V
For recommended footprint and soldering techniques refer to application note #AN-994.
fs
(BR)DSS
GS(th)
oss
SD
DS(on)
g
gs
gd
iss
rss
rr
V
R
(BR)DSS
Repetitive rating; pulse width limited by
I
T
max. junction temperature. ( See fig. 11 )
SD
DD
J
G
= 25 , I
= 25V, starting T
175°C
12A, di/dt
/ T
J
Drain-to-Source Leakage Current
Internal Source Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
= 12A. (See Figure 12)
140A/µs, V
J
= 25°C, L = 4.9 mH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Pulse width
Uses IRF3315 data and test conditions
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
––– 0.187 –––
–––
–––
Min. Typ. Max. Units
–––
2.0
17
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1300 –––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
300
160
–––
–––
–––
174
––– 0.082
9.6
1.2
49
38
7.5
32
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
260
4.0
1.3
1.7
21
300µs; duty cycle
25
95
11
47
84
V/°C
µA
nA
ns
nH
nC
µC
pF
ns
V
V
A
V
S
MOSFET symbol
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 12A
= 12A
= 25°C, I
= 25°C, I
= 5.1
= 5.9
= V
= 120V, V
= 0V, I
= 10V, I
= 50V, I
= 150V, V
= 20V
= 120V
= 10V, See Fig. 6 and 13
= 0V
= 25V
= -20V
= 75V
2%.
GS
, I
See Fig. 10
D
F
S
D
D
D
= 250µA
= 43A
= 43A, V
Conditions
Conditions
= 250µA
= 12A
= 12A
GS
GS
= 0V, T
= 0V
D
GS
= 1mA
J
= 0V
G
= 125°C
S
+L
D
D
S
)