IRF3315SPBF International Rectifier, IRF3315SPBF Datasheet
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IRF3315SPBF
Specifications of IRF3315SPBF
Related parts for IRF3315SPBF
IRF3315SPBF Summary of contents
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... Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...
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IRF3315S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...
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IRF3315S/L 3000 iss rss gd 2500 oss ds C iss 2000 1500 C oss 1000 C rss 500 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) ...
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IRF3315S 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...
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Peak Diode Recovery dv/dt Test Circuit + D.U Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple * ...
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IRF3315S Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055 1.78 (.070) 1.27 (.050 1.40 (.055) 3X 1.14 (.045) 5.08 (.200 ) ...
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Package Outline TO-262 Outline Part Marking Information TO-262 IRF3315S/L ...
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IRF3315S/L Tape & Reel Information 2 D Pak TIO 330.00 (14.173 ...