STP14NF10 STMicroelectronics, STP14NF10 Datasheet
STP14NF10
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STP14NF10
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STP14NF10 Summary of contents
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... It is also intended for any applications with low gate drive requirements. Table 1. Device summary Order code STP14NF10 April 2008 N-channel 100 V - 0.115 Ω TO-220 low gate charge STripFET™ II Power MOSFET max Figure 1. Marking P14NF10 Rev 4 STP14NF10 TO-220 Internal schematic diagram Package Packaging TO-220 Tube 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STP14NF10 ...
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... STP14NF10 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T tot Derating factor (2) dv/dt Peak diode recovery voltage slope (3) E Single pulse avalanche energy ...
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... max ratings max ratings 125 ° ± Parameter Test conditions MHz 4.7 Ω (see Figure 14 (see Figure 15) STP14NF10 Min. Typ. Max. =0 100 ±100 = 250 µ 0.115 0.13 Min. Typ. Max 460 15.5 21 3.7 4.7 Unit V µA µ Ω Unit ...
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... STP14NF10 Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STP14NF10 ...
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... STP14NF10 Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Normalized B VDSS vs temperature 7/12 ...
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... Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. Unclamped Inductive load test circuit Figure 19. Switching time waveform STP14NF10 ...
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... STP14NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STP14NF10 inch Min Typ Max 0.173 0.181 0.024 0.034 0.044 0.066 0.019 0.027 0.6 0.62 0.050 0.393 0.409 0.094 0.106 0.194 0.202 0.048 ...
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... STP14NF10 5 Revision history Table 7. Document revision history Date 05-Feb-2004 21-Jun-2004 19-Jun-2006 20-Mar-2008 Revision 1 First version 2 Preliminary version 3 New template, no content change 4 Removed packages: D²PAK and TO-220FP Revision history Changes 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STP14NF10 ...