IRF9Z24NSPBF International Rectifier, IRF9Z24NSPBF Datasheet - Page 4

• Manufacturer Part Number: IRF9Z24NSPBF
• Description: MOSFET P-CH 55V 12A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z24NSPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 175 m Ohms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 37 ns
• Gate Charge Qg: 12.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 55 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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