IRF9Z24NSPBF International Rectifier, IRF9Z24NSPBF Datasheet - Page 10

• Manufacturer Part Number: IRF9Z24NSPBF
• Description: MOSFET P-CH 55V 12A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9Z24NSPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 175 m Ohms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 12 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 37 ns
• Gate Charge Qg: 12.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 55 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dimensions are shown in millimeters (inches)
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10
2
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
TRR
TRL
330.00
(14.173)
MAX.
1.85 (.073)
1.65 (.065)
10.90 (.429)
10.70 (.421)
13.50 (.532)
12.80 (.504)
4.10 (.161)
3.90 (.153)
Visit us at www.irf.com for sales contact information. 04/05
Data and specifications subject to change without notice.
1.60 (.063)
1.50 (.059)
16.10 (.634)
15.90 (.626)
11.60 (.457)
11.40 (.449)
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
15.42 (.609)
15.22 (.601)
4
3
TAC Fax: [phone]
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
4
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MIN.