STF20NF20 STMicroelectronics, STF20NF20 Datasheet - Page 4
![MOSFET N-CH 200V 18A TO-220FP](/photos/5/30/53057/to-220_fp_sml.jpg)
STF20NF20
Manufacturer Part Number
STF20NF20
Description
MOSFET N-CH 200V 18A TO-220FP
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STD20NF20.pdf
(15 pages)
Specifications of STF20NF20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
940pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.125 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
72 A
Power Dissipation
90 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
28 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5811-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STF20NF20
Manufacturer:
ST
Quantity:
12 500
Part Number:
STF20NF20
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
r
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 13154 Rev 4
I
V
V
V
V
V
V
V
V
V
R
(see Figure 15)
V
V
(see Figure 16)
D
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 1 mA, V
= 4.7 Ω V
= Max rating
= Max rating, T
= ± 20 V
= V
= 10 V, I
= 25 V
= 25 V, f = 1 MHz,
= 0
= 100 V, I
= 160 V, I
= 10 V
Test conditions
Test conditions
GS
, I
,
I
GS
D
GS
D
D
= 10 A
D
D
= 250 µA
= 10 A
= 0
= 10 V
= 10 A,
= 20 A,
STD20NF20, STF20NF20, STP20NF20
C
= 125 °C
Min.
Min.
200
2
-
-
-
-
Typ.
Typ.
14.5
0.10
940
197
5.6
13
30
15
30
40
10
28
3
0.125
Max.
Max.
±100
39
10
1
4
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S