IRFR48ZPBF International Rectifier, IRFR48ZPBF Datasheet - Page 6

• Manufacturer Part Number: IRFR48ZPBF
• Description: MOSFET N-CH 55V 42A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFR48ZPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 37A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 50µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1720pF @ 25V
• Power - Max: 91W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 42A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 11mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 11 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 62 A
• Power Dissipation: 91 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 35 ns
• Gate Charge Qg: 40 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 61 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFR48ZPBF

0
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V
V DS
GS
Q
1K
GS
t p
t p
I AS
D.U.T
0.01
L
Q
Charge
Q
V
GD
G
DUT
(BR)DSS
L
15V
DRIVER
+
-
VCC
V DD
A
Fig 14. Threshold Voltage vs. Temperature
300
250
200
150
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
0
Fig 12c. Maximum Avalanche Energy
25
-75 -50 -25
I D = 1.0A
I D = 50µA
I D = 150µA
I D = 250µA
I D = 1.0mA
Starting T J , Junction Temperature (°C)
50
vs. Drain Current
T J , Temperature ( °C )
0
75
25
100
50
75
TOP
BOTTOM
125
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100 125 150 175
150
6.3A
4.3A
37A
I D
175