IRF6711STRPBF International Rectifier, IRF6711STRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF6711STRPBF
• Description: MOSFET N-CH 25V 19A DIRECTFET-SQ
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6711STRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 19A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1810pF @ 13V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric SQ
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 42 W
• Gate Charge Qg: 13 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t p
DRIVER
L
V DS
D.U.T
R G
+
GS
- V DD
I AS
A
20V
0.01 Ω
I
t p
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
V
DS
90%
+
-
10%
V
GS
≤ 1
t
t
t
≤ 0.1 %
t
d(on)
d(off)
r
f
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
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