STD90N03L-1 STMicroelectronics, STD90N03L-1 Datasheet - Page 3

• Manufacturer Part Number: STD90N03L-1
• Description: MOSFET N-CH 30V 80A IPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD90N03L-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 2805pF @ 25V
• Power - Max: 95W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0057 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 95 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STD90N03L - STD90N03L-1
1
Electrical ratings
Table 1.
1. Value limited by wire bonding
2. Pulse width limited by safe operating area
3.
Table 2.
Symbol
Symbol
R
R
E
I
Starting T
P
thj-case
DM
thj-amb
V
I
V
T
AS
D
T
I
TOT
T
GS
DS
stg
D
(1)
J
j
(2)
(3)
j
Absolute maximum ratings
Thermal data
= 25°C, I
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Single pulse avalanche energy
Operating junction temperature
Storage temperature
D
=40A, V
Parameter
DD
Parameter
=15V
C
= 25°C
GS
= 0)
C
C
=100°C
= 25°C
-55 to 175
Value
Value
1.58
0.63
100
275
±20
320
350
64
95
30
80
Electrical ratings
W/°C
°C/W
°C/W
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
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