STB4NK60Z-1 STMicroelectronics, STB4NK60Z-1 Datasheet - Page 12
STB4NK60Z-1
Manufacturer Part Number
STB4NK60Z-1
Description
MOSFET N-CH 600V 4A I2PAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB4NK60ZT4.pdf
(20 pages)
Specifications of STB4NK60Z-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB4NK60Z-1
Manufacturer:
ST
Quantity:
12 500
Package mechanical data
12/20
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
D
G
H
A
B
E
F
15.90
Min.
4.40
0.45
0.75
1.15
1.15
4.95
2.40
28.6
9.80
2.5
2.5
2.9
10
9
3
Dia
TO-220FP mechanical data
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
mm.
Typ
16
10.40
10.60
16.40
Max.
4.60
2.75
0.70
1.00
1.50
1.50
5.20
2.70
30.6
9.30
2.7
3.6
3.2
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
1.126
0.385
0.114
0.626
0.354
0.118
Min.
0.630
inch
Typ.
7012510-I
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
1.204
0.417
0.141
0.645
0.366
0.126
Max.