STD4NK80Z-1 STMicroelectronics, STD4NK80Z-1 Datasheet - Page 4

• Manufacturer Part Number: STD4NK80Z-1
• Description: MOSFET N-CH 800V 3A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD4NK80Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical ratings
1.1
4/18
Table 3.
Table 4.
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
BV
E
I
AR
AS
GSO
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Gate-source breakdown voltage Igs=± 1mA (Open Drain)
Avalanche characteristics
Gate-source zener diode
Parameter
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Parameter
Test conditions
Min.
30
Value
190
3
Typ.
Max.
Unit
mJ
Unit
A
V