STD3NK80Z-1 STMicroelectronics, STD3NK80Z-1 Datasheet - Page 4

• Manufacturer Part Number: STD3NK80Z-1
• Description: MOSFET N-CH 800V 2.5A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK80Z-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.25A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 3.8ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical ratings
4/18
Table 4.
Symbol
E
I
AR
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25 °C, I
Avalanche characteristics
D
=I
Doc ID 9565 Rev 6
Parameter
AR
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
, V
DD
=50 V)
Value
170
2.5
Unit
mJ
A