STD16NF25 STMicroelectronics, STD16NF25 Datasheet - Page 5

• Manufacturer Part Number: STD16NF25
• Description: MOSFET N-CH 250V 13A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD16NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 680pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7959-2; STD16NF25

STD16NF25 - STF16NF25 - STP16NF25
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see
I
di/dt = 100A/µs,
V
(see
SD
SD
SD
DD
DD
= 13A, V
= 13A,
= 13A,
= 60V
= 60V, T
Figure
Figure
Test conditions
20)
20)
GS
j
= 150°C
= 0
Min.
Electrical characteristics
Typ.
133
651
157
895
10
11
Max.
1.6
13
52
Unit
µC
µC
ns
ns
A
A
V
A
A
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