IRFH5207TRPBF International Rectifier, IRFH5207TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5207TRPBF
• Description: MOSFET N-CH 75V 13A 8-PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5207TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2474pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 71 A
• Power Dissipation: 105 W
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14a. Unclamped Inductive Test Circuit
25
20
15
10
Fig 12. On-Resistance vs. Gate Voltage
5
Fig 15a. Switching Time Test Circuit
4
R G
20V
6
V GS, Gate -to -Source Voltage (V)
V DS
t p
8
≤ 0.1
≤ 1
I AS
D.U.T
10
0.01 Ω
L
12
T J = 125°C
T J = 25°C
14
15V
16
I D = 43A
DRIVER
18
+
-
+
-
V DD
20
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
400
350
300
250
200
150
100
50
Fig 14b. Unclamped Inductive Waveforms
0
90%
V
25
10%
V
I
DS
AS
GS
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
50
t
d(on)
t
t p
75
r
TOP
BOTTOM 43A
100
t
d(off)
V
(BR)DSS
125
I D
4.4A
11A
t
f
150
5