IRFH5207TRPBF International Rectifier, IRFH5207TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFH5207TRPBF
• Description: MOSFET N-CH 75V 13A 8-PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5207TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.6 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2474pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 71 A
• Power Dissipation: 105 W
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
100000
10000
Fig 3. Typical Transfer Characteristics
1000
1000
1000
0.01
100
Fig 1. Typical Output Characteristics
100
0.1
100
0.1
10
10
10
1
1
0.1
2
1
TOP
BOTTOM
T J = 150°C
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4
VGS
15V
10V
7.00V
5.00V
4.75V
4.50V
4.25V
4.00V
1
T J = 25°C
≤ 60µs
Tj = 25°C
5
4.0V
C rss
C oss
f = 1 MHZ
C iss
V DS = 25V
≤60µs PULSE WIDTH
10
6
PULSE WIDTH
7
10
8
9
100
100
10
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
1000
100
Fig 4. Normalized On-Resistance Vs. Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
14
12
10
1
8
6
4
2
0
0.1
-60 -40 -20 0
0
Fig 2. Typical Output Characteristics
I D = 43A
TOP
BOTTOM
I D = 43A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
10
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
VGS
15V
10V
7.00V
5.00V
4.75V
4.50V
4.25V
4.00V
V DS = 60V
V DS = 38V
VDS= 15V
20
1
20 40 60 80 100 120 140 160
≤ 60µs
Tj = 150°C
4.0V
30
PULSE WIDTH
40
10
50
100
60
3