STD3N62K3 STMicroelectronics, STD3N62K3 Datasheet - Page 6

• Manufacturer Part Number: STD3N62K3
• Description: MOSFET N-CH 620V 2.7A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3N62K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 620V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 385pF @ 25V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8478-2

Electrical characteristics
6/20
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 9.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
I
V
SDM
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components
SD
RRM
RRM
GSO
I
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source drain diode
Gate-source Zener diode
Parameter
Parameter
STB3N62K3, STD3N62K3, STF3N62K3, STP3N62K3, STU3N62K3
Doc ID 14894 Rev 2
I
I
V
I
V
(see
Igs=± 1 mA (open drain)
SD
SD
SD
DD
DD
= 2.7 A, V
= 2.7 A, di/dt = 100 A/µs
= 2.7 A, di/dt = 100 A/µs
= 60 V (see
= 60 V, T
Figure
Test conditions
Test conditions
21)
GS
j
= 150 °C
= 0
Figure
21)
Min.
Min
30
-
-
-
-
1100
Typ.
190
825
255
Typ
10
9
Max. Unit
10.8
Max Unit
2.7
1.6
nC
nC
ns
ns
A
A
V
A
A
V