IRFIZ48NPBF International Rectifier, IRFIZ48NPBF Datasheet - Page 5

• Manufacturer Part Number: IRFIZ48NPBF
• Description: MOSFET N-CH 55V 40A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFIZ48NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 54W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Current, Drain: 36 A
• Gate Charge, Total: 89 nC
• Package Type: TO-220 Full-Pak
• Polarization: N-Channel
• Power Dissipation: 42 W
• Resistance, Drain To Source On: 0.016 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 32 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 22 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 36 A
• Mounting Style: Through Hole
• Gate Charge Qg: 59.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFIZ48NPBF

0.01
0.1
10
0.00001
50
40
30
20
10
1
0
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
75
0.0001
SINGLE PULSE
100
125
0.001
t , Rectangular Pulse Duration (sec)
°
1
150
175
0.01
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
t
r
J
≤ 0.1 %
≤ 1
DM
x Z
1
thJC
P
2
DM
1
t
d(off)
+ T
C
t
1
t
f
t
2
+
-
10