IRFIZ48NPBF International Rectifier, IRFIZ48NPBF Datasheet - Page 4

• Manufacturer Part Number: IRFIZ48NPBF
• Description: MOSFET N-CH 55V 40A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFIZ48NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 89nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 25V
• Power - Max: 54W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Current, Drain: 36 A
• Gate Charge, Total: 89 nC
• Package Type: TO-220 Full-Pak
• Polarization: N-Channel
• Power Dissipation: 42 W
• Resistance, Drain To Source On: 0.016 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 32 ns
• Time, Turn-on Delay: 11 ns
• Transconductance, Forward: 22 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 36 A
• Mounting Style: Through Hole
• Gate Charge Qg: 59.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFIZ48NPBF

1000
100
4000
3000
2000
1000
0.1
10
1
0.2
0
1
T = 175°C
J
C
C
C
V
0.6
V
iss
rss
oss
SD
DS
, Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
T = 25°C
1.0
J
= 0V,
= C
= C
= C
gs
gd
ds
1.4
+ C
+ C
10
gd
gd
f = 1MHz
, C
1.8
ds
SHORTED
V
2.2
GS
= 0V
2.6
100
A
A
1000
100
10
20
16
12
1
8
4
0
1
0
T
T
Single Pulse
I
D
C
J
= 25 C
= 175 C
= 32A
OPERATION IN THIS AREA LIMITED
V
DS
°
20
Q , Total Gate Charge (nC)
°
, Drain-to-Source Voltage (V)
G
BY R
40
V
V
10
DS(on)
DS
DS
= 44V
= 28V
FOR TEST CIRCUIT
60
SEE FIGURE 13
80
10us
100us
1ms
10ms
100
100
A