STP4NK50ZFP STMicroelectronics, STP4NK50ZFP Datasheet - Page 2

• Manufacturer Part Number: STP4NK50ZFP
• Description: MOSFET N-CH 500V 3A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP4NK50ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 2.3ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 2.7 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 11 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP4NK50Z - STP4NK50ZFP - STD4NK50Z - STD4NK50Z-1
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
AR
ISO
T
T
stg
DS
GS
AS
GSO
D
D
3 A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case (Max)
Thermal Resistance Junction-ambient (Max)
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
j
DD
= 25 °C, I
V
(BR)DSS
Parameter
D
C
GS
, T
= I
= 25°C
GS
j
j
= 20 k )
max)
AR
Parameter
= 0)
T
, V
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
STP4NK50Z
0.36
1.9
12
45
3
-
TO-220
2.78
STP4NK50ZFP
-55 to 150
62.5
1.9 (*)
Value
12 (*)
2800
2500
Min.
± 30
3 (*)
0.16
500
500
4.5
30
20
TO-220FP
300
6.25
Max Value
120
Typ.
3
STD4NK50Z-1
STD4NK50Z
1.9 (*)
12 (*)
3 (*)
0.36
45
DPAK
-
IPAK
2.78
100
Max.
W/°C
°C/W
°C/W
Unit
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
V
A
A
A
V
V
A
V