STP7NK30Z STMicroelectronics, STP7NK30Z Datasheet - Page 3

• Manufacturer Part Number: STP7NK30Z
• Description: MOSFET N-CH 300V 5A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP7NK30Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 2.5 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STx7NK30Z
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. C
C
V
Symbol
Symbol
R
V
oss eq.
(BR)DSS
g
increases from 0 to 80% V
I
I
C
DS(on)
GS(th)
C
C
Q
Q
DSS
GSS
fs
Q
oss eq.
oss
rss
iss
gs
gd
g
(1)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS.
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
Figure 16
D
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
GS
=1 mA, V
=max rating
=max rating @125 °C
= ± 20 V
= V
= 10 V, I
=15 V
= 25 V, f = 1MHz,
= 0
= 0, V
= 10 V
= 240 V, I
Test conditions
Test conditions
GS
,
, I
DS
I
GS
D
D
D
= 0 to 240 V
= 2.5 A
D
= 50 µA
= 2.5 A
= 0
= 7 A,
Electrical characteristics
Min.
Min.
300
3
Typ.
3.75
0.80
Typ.
380
2.5
4.5
7.6
74
15
30
13
oss
when V
Max. Unit
Max.
0.90
±10
4.5
17
50
1
DS
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
Ω
3/15
V
S